N-Channel 100V 3.3A (Ta), 16A (Tc) 2.3W (Ta), 35W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 3.3A (Ta), 16A (Tc) 2.3W (Ta), 35W (Tc) Surface Mount 8-MLP (3.3x3.3)
N-Channel 100V 3.3A (Ta), 16A (Tc) 2.3W (Ta), 35W (Tc) Surface Mount 8-MLP (3.3x3.3)
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066975-FDMC3612
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.3W (Ta), 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 3.3A (Ta), 16A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 880pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
MOSFET N-CH 100V 3.3A/16A 8MLP
MOSFET, N CHANNEL, 100V, 0.092OHM, 16A, MLP-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; On Resistance Rds(on):0.092ohm; Transistor Mounting:Surface Mount; Power Dissipation Pd:35WRoHS Compliant: Yes
MOSFET, N CH, 100V, 16A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V RoHS Compliant: Yes
100V 12A 110mΩ@10V,3.3A 35W 4V@250uA N Channel Power-33 MOSFETs ROHS
MOSFET N-CH 100V 3.3A/16A 8MLP
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDMC3612CT-ND | 066975-FDMC3612 | FDMC3612 | 7599516 | 7599516P | 8644891 | FDMC3612 | 85W3141 | 88T3260 | FDMC3612 | FDMC3612 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDMC3612 | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFETs | MOSFET | Mosfet, N Channel, 100V, 0.092Ohm, 16A, Mlp-8; Transistor Polarity Onsemi | Mosfet, N Ch, 100V, 16A, Mlp 3.3X3.3; Transistor Polarity Onsemi | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | 8-PowerWDFN | SOT3; 8-MLP (3.3x3.3) | 8-PowerWDFN | Power 33 | MLP | Mlp | TO-3 | TO-3 | 8-PowerWDFN | ||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||||||
| PD | 2300 to 35000 milliwatts | 2300 milliwatts | 35000 milliwatts | 35000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
