onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8580 FDD8580

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038119-FDD8580 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 49.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1445pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038119-FDD8580 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 49.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1445pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8580 - 1038119-FDD8580 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8580
1038119-FDD8580
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8580 1038119-FDD8580
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038119-FDD8580 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 49.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-PAK (TO-252AA) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 1445pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038119-FDD8580
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 49.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-PAK (TO-252AA)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 1445pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDD8580TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD8580TR-ND
Single FETs, MOSFETs FDD8580TR-ND
N-Channel 20V 35A (Tc) 49.5W (Tc) Surface Mount TO-252AA

N-Channel 20V 35A (Tc) 49.5W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Singapore
20V 35A DPAK MOSFET Transistor
278-FDD8580
20V 35A DPAK MOSFET Transistor 278-FDD8580
MOSFET N-CH 20V 35A DPAK Product overview: FDD8580 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8580 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 35A DPAK Product overview: FDD8580 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 35A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 35A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD8580 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1038119-FDD8580 FDD8580TR-ND 278-FDD8580
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD8580 Single FETs, MOSFETs 20V 35A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 20 volts
PD 49500 milliwatts 49500 milliwatts
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