onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD850N10LD FDD850N10LD

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038118-FDD850N10LD Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-5 Dimension: TO-252-5, DPak (4 Leads + Tab), TO-252AD Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.3A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 28.9nC @ 10V Max Input Capacitance: 1465pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038118-FDD850N10LD Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-5 Dimension: TO-252-5, DPak (4 Leads + Tab), TO-252AD Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.3A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 28.9nC @ 10V Max Input Capacitance: 1465pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 2,500
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD850N10LD - 1038118-FDD850N10LD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD850N10LD
1038118-FDD850N10LD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD850N10LD 1038118-FDD850N10LD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038118-FDD850N10LD Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-5 Dimension: TO-252-5, DPak (4 Leads + Tab), TO-252AD Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 15.3A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 28.9nC @ 10V Max Input Capacitance: 1465pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 75 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038118-FDD850N10LD
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-5
Dimension: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 15.3A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 28.9nC @ 10V
Max Input Capacitance: 1465pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 75 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - FDD850N10LDTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDD850N10LDTR-ND
Single FETs, MOSFETs FDD850N10LDTR-ND
N-Channel 100V 15.3A (Tc) 42W (Tc) Surface Mount TO-252 (DPAK)

N-Channel 100V 15.3A (Tc) 42W (Tc) Surface Mount TO-252 (DPAK)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDD850N10LD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDD850N10LD
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDD850N10LD
MOSFET N-CH 100V 15.3A TO252-4L

MOSFET N-CH 100V 15.3A TO252-4L

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1038118-FDD850N10LD FDD850N10LDTR-ND FDD850N10LD
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD850N10LD Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 42000 milliwatts
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