Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 015948-FDD6680AS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 55A (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1200pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N-Channel 30V 55A (Ta) 60W (Ta) Surface Mount TO-252AA
MOSFET, N, SMD, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:55A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET N-CH 30V 55A TO252
| Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 015948-FDD6680AS | FDD6680ASFSTR-ND | 61M6227 | FDD6680AS | FDD6680AS |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD6680AS | Single FETs, MOSFETs | Mosfet, N, Smd, To-252; Channel Type Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | ||||
| PD | 60000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
