onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N50UTM_WS FDD5N50UTM_WS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118751-FDD5N50UTM_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118751-FDD5N50UTM_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N50UTM_WS - 118751-FDD5N50UTM_WS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N50UTM_WS
118751-FDD5N50UTM_WS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N50UTM_WS 118751-FDD5N50UTM_WS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 118751-FDD5N50UTM_WS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 650pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 118751-FDD5N50UTM_WS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 650pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
500V 3A DPAK MOSFET Transistor
285-FDD5N50UTM_WS
500V 3A DPAK MOSFET Transistor 285-FDD5N50UTM_WS
MOSFET N-CH 500V 3A DPAK Product overview: FDD5N50UTM_WS from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDD5N50UTM_WS can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 3A DPAK Product overview: FDD5N50UTM_WS from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 3A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 3A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDD5N50UTM_WS can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 118751-FDD5N50UTM_WS 285-FDD5N50UTM_WS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5N50UTM_WS 500V 3A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 40000 milliwatts 40000 milliwatts
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