20-V P-Channel NexFET Power MOSFET, CSD25310Q2 6-WSON -40 to 85
Manufacturer: Texas Instruments
Win Source Part Number: 1030673-CSD25310Q2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.9W (Ta)
Family Name: CSD25310Q2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-WSON (2x2)
Dimension: 6-WDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 4.7nC @ 4.5V
Max Input Capacitance: 655pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 23.9 mOhm @ 5A, 4.5V
Alternative Parts (Cross-Reference): CSD25310Q2T;
Introduction Date: January 21, 2014
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)
P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)
P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2)
MOSFET P-CH 20V 20A 6WSON
MOSFET, P-CH, -20V, -20A, WSON-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0199ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-850mV; Power RoHS Compliant: Yes
MOSFET P-CH 20V 20A 6WSON
MOSFET 20-V P-CH NexFET Pwr MOSFET
-20V, P ch NexFET MOSFET™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150
| Texas Instruments | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD25310Q2 | 2088489 | 2088489P | 1030673-CSD25310Q2 | 296-38915-6-ND | CSD25310Q2 | 29AH0977 | CSD25310Q2 | CSD25310Q2 | 815-CSD25310Q2 |
| Product Name | CSD25310Q2 20-V P-Channel NexFET Power MOSFET, CSD25310Q2 | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25310Q2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -20V, -20A, Wson-6; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | -20V, P ch NexFET MOSFET™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150 |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | |||||
| V(BR)DSS | -20 volts | 20 volts | 20 volts | 20 volts | 20 volts | |||||
| rDS(on) | 0.0239 ohms | 2.39E6 ohms | 0.0199 ohms | 0.0890 ohms | ||||||
| IDSS | -48000 milliamps | 20000 milliamps | 20000 milliamps | -20000 milliamps | ||||||
| QG | 3.6 nC |
