MOSFET N-CH 60V 5.4A TO252-3
N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252AA
60V N-Ch MOSFET, 18A, 55mΩ, TO-252AA, SMT Product overview: FDD5612 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDD5612 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 066924-FDD5612
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 660pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 55 mOhm @ 5.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
MOSFET N-CH 60V 5.4A TO252-3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 60V, 0.055OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY
TRANSISTOR, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:42W; RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDD5612 | FDD5612TR-ND | 278-FDD5612 | 066924-FDD5612 | FDD5612 | 16114634 | 46T4190 | FDD5612 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 18A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD5612 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Transistor, Mosfet; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 5400 milliamps | 18000 milliamps | ||||||
| PD | 3800 milliwatts | 1600 milliwatts | 3800 to 42000 milliwatts | 42000 milliwatts |
