onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD14AN06LA0_F085 FDD14AN06LA0_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 110489-FDD14AN06LA0_ F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.5A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 32nC @ 5V Max Input Capacitance: 2810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.6 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 110489-FDD14AN06LA0_ F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.5A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 32nC @ 5V Max Input Capacitance: 2810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.6 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD14AN06LA0_F085 - 110489-FDD14AN06LA0_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD14AN06LA0_F085
110489-FDD14AN06LA0_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD14AN06LA0_F085 110489-FDD14AN06LA0_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 110489-FDD14AN06LA0_ F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 9.5A (Ta), 50A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 32nC @ 5V Max Input Capacitance: 2810pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.6 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 110489-FDD14AN06LA0_F085
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.5A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 32nC @ 5V
Max Input Capacitance: 2810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.6 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
60V 9.5A DPAK MOSFET Transistor
285-FDD14AN06LA0_F085
60V 9.5A DPAK MOSFET Transistor 285-FDD14AN06LA0_F085
MOSFET N-CH 60V 9.5A DPAK-3 Product overview: FDD14AN06LA0_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDD14AN06LA0_F08 5 can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 9.5A DPAK-3 Product overview: FDD14AN06LA0_F085 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.5A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.5A, DPAK, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FDD14AN06LA0_F085 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 110489-FDD14AN06LA0_F085 285-FDD14AN06LA0_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDD14AN06LA0_F085 60V 9.5A DPAK MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 125000 milliwatts 125000 milliwatts
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