onsemi Single FETs, MOSFETs FDC640P-NBAD004A

P-channel MOSFET for power management applications, packaged in a TSOT-23-6 (SUPERSOT-6) case, with a drain-source voltage rating of -20 V, continuous drain current of -4.5 A, and maximum power dissipation of 1.6 W. It features an on-resistance of 0.053 Ω at -4.5 V gate drive and 0.080 Ω at -2.5 V gate drive, a rugged gate rating of ±12 V, and operates over a junction temperature range of -55°C to +150°C. The device meets RoHS standards and is Pb-free and halogen-free.