MOSFET P-Channel 20V 1.9A SuperSOT6
MOSFET P-Channel 20V 1.9A SuperSOT6
MOSFET P-Channel 20V 1.9A SuperSOT6
MOSFET 2P-CH 20V 1.9A SSOT6
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001135-FDC6306P
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6306P
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.9A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.2nC @ 4.5V
Max Input Capacitance: 441pF @ 10V
Maximum Rds On at Id,Vgs: 170 mOhm @ 1.9A, 4.5V
Alternative Parts (Cross-Reference): Si3981DV-T1-E3; Si3981DV-T1; Si3981DV; Si3981DV-T1-GE3;
Introduction Date: March 17, 1999
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Quantity per package: 3k pcs
Mosfet Array 2 P-Channel (Dual) 20V 1.9A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 20V 1.9A 700mW Surface Mount SuperSOT™-6
Mosfet Array 2 P-Channel (Dual) 20V 1.9A 700mW Surface Mount SuperSOT™-6
MOSFET 2P-CH 20V 1.9A SSOT6
MOSFET Transistor, Dual P Channel, -1.9 A, -20 V, 127 mohm, -4.5 V, -900 mV RoHS Compliant: Yes
DUAL P CH MOSFET, -20V, SUPER SOT-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.9A; On Resistance Rds(on):0.127ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.9A; On Resistance Rds(on):0.127ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET Transistor, Dual P Channel, -1.9 A, -20 V, 127 mohm, -4.5 V, -900 mV RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 7619834 | 7619834P | FDC6306P | 001135-FDC6306P | FDC6306PDKR-ND | FDC6306P | FDC6306P | 87X5225 | 38C7094 |
| Product Name | MOSFETs | MOSFETs | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDC6306P | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, Dual P Channel, -1.9 A, -20 V, 127 Mohm, -4.5 V, -900 Mv Rohs Compliant Onsemi | Dual P Ch Mosfet, -20V, Super Sot-6; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Package Type | SOT23; Sot-23 | SOT23; SOT-23 | SOT23; SOT-23-6 Thin, TSOT-23-6 | SOT3; SOT23; SuperSOT-6 | SOT23; SOT-23-6 Thin, TSOT-23-6 | TO-3 | TO-3 | ||
| Number of units in IC | 2 | ||||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
