onsemi FET, MOSFET Arrays FDC6301N

MOSFET 2N-CH 25V 220MA SSOT6

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001131-FDC6301N
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDC6301N
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SuperSOT-6
Maximum Power Dissipation: 700mW
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 220mA
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 9.5pF @ 10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 400mA, 4.5V
Alternative Parts (Cross-Reference): FDC6301N-Q; FDC6301N-NL; FDC6301N-NF40 ;
Introduction Date: October 07, 1997
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Surface Mount SuperSOT™-6

Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Surface Mount SuperSOT™-6