onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8442_F085 FDB8442_F085

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001106-FDB8442_F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 254W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 10V Max Input Capacitance: 12200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001106-FDB8442_F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 254W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 10V Max Input Capacitance: 12200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8442_F085 - 001106-FDB8442_F085 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8442_F085
001106-FDB8442_F085
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8442_F085 001106-FDB8442_F085
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001106-FDB8442_F085 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 254W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 10V Max Input Capacitance: 12200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001106-FDB8442_F085
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 254W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 28A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 235nC @ 10V
Max Input Capacitance: 12200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 001106-FDB8442_F085
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDB8442_F085
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 254000 milliwatts
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