MOSFETs N-Channel SuperFET II FRFET MOSFET Product overview: FCP190N65F from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCP190N65F can be used for catalog matching and distributor lookup.
N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204073-FCP190N65F
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 20.6A (Tc)
Gate-Source Threshold Voltage: 5V @ 2mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 3225pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 190 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Quantity per package: 800
MOSFET N-CH 650V 20.6A TO220-3
POWER FIELD-EFFECT TRANSISTOR, 2
MOSFET N-CH 650V 20.6A TO220-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-FCP190N65F | FCP190N65F-ND | 204073-FCP190N65F | FCP190N65F | FCP190N65F | FCP190N65F |
| Product Name | N-Channel MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCP190N65F | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| Transconductance | 0.0180 kS | |||||
| PD | 208 milliwatts | 208000 milliwatts | 208000 milliwatts | |||
| Package Type | Tube | TO-220; TO-220-3 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 |
