N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88
N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88
N-Channel 600V 20.2A (Tc) 208W (Tc) Surface Mount Power88
Manufacturer: ON Semiconductor
Win Source Part Number: 871555-FCMT199N60
Series: SuperFET® II
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 20.2A (Tc) 208W (Tc) Surface Mount Power88
Package: 4-PowerTSFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: FCMT199
Categories: Discrete Semiconductor Products
Case / Package: Power88
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 50 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FCMT199N60CT, FCMT199N60TR, FCMT199N60DKR
MOSFETs 199mohm 600V SuperFET2 Product overview: FCMT199N60 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 199mohm, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 199mohm, 600V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FCMT199N60 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 20.2A POWER88
MOSFET, N-CH, 20.2A, 600V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 20.2A POWER88
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FCMT199N60DKR-ND | 871555-FCMT199N60 | 2088-FCMT199N60 | FCMT199N60 | FCMT199N60 | 07AH3882 | FCMT199N60 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FCMT199N60 | 199mohm 600V MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20.2A, 600V, Pqfn; Transistor Polarity Onsemi | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | 4-PowerTSFN | SOT3; Power88 | Reel | 4-PowerTSFN | TO-3 | 4-PowerTSFN | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0200 kS |
