The FCB20N60TM is an N-channel SuperFET MOSFET designed for high-voltage switching applications such as AC-DC power supplies, PFC, and industrial power systems. It is packaged in a D2-PAK format and rated for a drain-to-source voltage of 600 V, with a continuous drain current of 20 A at 25°C and 12.5 A at 100°C. The device has a maximum on-resistance of 0.19 Ω at V_GS = 10 V, a total gate charge of 98 nC, and a single-pulsed avalanche energy of 690 mJ. It is RoHS compliant and operates over a junction temperature range of -55°C to 150°C. Thermal resistance from junction to case is 0.6°C/W.
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:208W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 15AC2922 |
| Product Name | Channel Type Onsemi |
| Package Type | TO-3 |
