The 4N33TVM is a 6-pin DIP photodarlington optocoupler with a gallium arsenide infrared emitter and silicon photodarlington detector, designed for isolating low-power logic circuits and interfacing systems of differing potentials. It features an 850 V peak working insulation voltage, 4170 VAC RMS input-to-output isolation voltage, and meets DIN EN/IEC 60747-5-5 and UL 1577 safety standards. The device has a maximum collector current of 150 mA, operates from -40°C to 100°C, and complies with RoHS. The 4N33TVM variant includes 0.4" lead spacing and complies with DIN EN/IEC 60747-5-5 for enhanced insulation. It is packaged in a tube for 50 units.
Photodarlington Optocoupler, 150mA, 5.25kV Isolation, DIP Product overview: 4N33TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150mA, 5.25kV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 150mA, 5.25kV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N33TVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N33TVM |
| Product Name | 150mA 5.25kV DIP Bipolar Transistor |
| IC(max) | 150 milliamps |
