Infineon Technologies AG Small Signal Transistors & Diodes - Bipolar Transistor - General Purpose Transistor - BC857BW BC857BW

BC857BW is a PNP silicon AF transistor in an SOT323 package, designed for AF input stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and low noise between 30 Hz and 15 kHz. The device has a collector-emitter voltage rating of 30 V, a collector current of 100 mA, and a total power dissipation of 250 mW at temperatures up to 124 °C. It is RoHS compliant and has a junction temperature rating of 150 °C. The transition frequency is 250 MHz, and the collector-base capacitance is 1.5 pF at 10 V. This variant is not qualified to AEC-Q101.