onsemi 2SK3818-DL-E

N-Channel Silicon MOSFET designed for general-purpose switching applications such as motor drive and DC/DC conversion. The device features low ON-resistance, ultrahigh-speed switching, and 4V gate drive capability, with avalanche energy rating of 410 mJ and continuous drain current of 74 A. It is packaged in an SMP-FD case with dimensions of 10.2 mm × 9.0 mm, and operates with a channel temperature rating up to 150°C. Static drain-to-source on-state resistance is rated at 10-13 mΩ at VGS=10V and ID=37A, and 13-18 mΩ at VGS=4V. Input, output, and reverse transfer capacitances are 5250 pF, 780 pF, and 525 pF respectively at VDS=20V and f=1MHz. Total gate charge is 100 nC at VDS=30V and VGS=10V. The part has undergone stringent voltage and current stress testing with guaranteed avalanche current capability of 74 A.