Nexperia B.V. 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ PUMD3,125

NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH11

PNP/PNP complement: PUMB11

Features and benefits

• 100 mA output current capability
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs

Applications

• Digital application in automotive and industrial segments
• Cost-saving alternative for BC847/BC857 series in digital applications
• Controlling IC inputs
• Switching loads

PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin Product overview: PUMD3,125 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include TSSOP. Search-friendly keywords include transistor, BJT, switching, amplification, TSSOP, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PUMD3,125 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1376977-PUMD3,125
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Package: Tape & Reel
Product Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Product Number: PUMD3
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 300mW

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP