N-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Texas Instruments
Win Source Part Number: 867349-CSD13303W1015
Series: NexFET™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 12 V 31A (Ta) 1.65W (Ta) Surface Mount 6-DSBGA (1x1.5)
Package: 6-UFBGA, DSBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: CSD13303
Categories: Discrete Semiconductor Products
Case / Package: 6-DSBGA (1x1.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 34 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 296-39990-2, 296-39990-1, -296-39990-1-ND, 296-39990-6, CSD13303W1015-ND
N-Channel 12V 31A (Ta) 1.65W (Ta) Surface Mount 6-DSBGA (1x1.5)
N-Channel 12V 31A (Ta) 1.65W (Ta) Surface Mount 6-DSBGA (1x1.5)
N-Channel 12V 31A (Ta) 1.65W (Ta) Surface Mount 6-DSBGA (1x1.5)
MOSFET N-CH 12V 31A 6DSBGA
| Texas Instruments | Rochester Electronics | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD13303W1015 | CSD13303W1015 | 867349-CSD13303W1015 | 296-39990-2-ND | CSD13303W1015 | CSD13303W1015 |
| Product Name | CSD13303W1015 N-Channel NexFET? Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD13303W1015 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 12 volts | |||||
| rDS(on) | 0.0200 ohms | 0.0230 ohms | ||||
| IDSS | 31000 milliamps |
