NPN Resistor-Equipped Transistor (RET) in a small SOT23 surface-mounted package measuring 2.9 mm x 1.3 mm x 1 mm, with built-in bias resistor R1 = 2.2 kΩ and R2 open. Offers 100 mA collector current capability, 50 V collector-emitter voltage rating, and full power dissipation of 250 mW at 25 °C ambient. Junction temperature range extends from -65 °C to 150 °C. Qualified to AEC-Q101 for automotive applications.
NPN Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA123TT
Features and benefits
Applications
PDTC123TT-Q/SOT23/TO
PDTC123TT-Q/SOT23/TO
PDTC123TT-Q/SOT23/TO
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | PDTC123TT-QR | 1727-PDTC123TT-QRTR-ND |
| Product Name | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open | Single, Pre-Biased Bipolar Transistors |
| Package Type | SOT23; SOT23 SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 |
