NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package with a body size of 1.4 mm x 1.2 mm x 0.47 mm and a height of 0.5 mm. Each transistor has a collector-emitter voltage rating of 45 V and a collector current rating of 100 mA, with a peak collector current of 200 mA for pulses up to 1 ms. The dc current gain ranges from 200 to 450 at 5 V and 2 mA. The device is AEC-Q101 qualified for automotive use and offers reduced component count and pick and place costs.
NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: BC847RA
PNP/PNP complement: BC857RA
Features and benefits
Applications
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6
Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 480mW Surface Mount DFN1412-6
TRANSISTOR ARRAY, AEC-Q101, 45V, DFN1412; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:480mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:DFN1412; No. ofRoHS Compliant: Yes
TRAN NPN/PNP 45V 0.1A DFN1412-6
TRAN NPN/PNP 45V 0.1A DFN1412-6
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BC847RAPNZ | 1727-BC847RAPNZCT-ND | 37AC0524 | BC847RAPNZ | BC847RAPNZ |
| Product Name | 45 V, 100 mA NPN/PNP general-purpose double transistors | Bipolar Transistor Arrays | Transistor Array, Aec-Q101, 45V, Dfn1412; Transistor Polarity Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor Arrays |
| Package Type | SOT1268 SOT1268 | 6-XFDFN Exposed Pad | TO-3 | AEC-Q100 | 6-XFDFN Exposed Pad |
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||
| VCEO | 45 volts | 45 volts | 45 volts | ||
| PD | 325 milliwatts | ||||
| hfe | 450 |
