PNP low VCEsat transistor in a SOT223 plastic package with a 6.5 mm x 3.5 mm x 1.65 mm body. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -5 A, and a peak collector current of -10 A. The collector-emitter saturation voltage is up to -375 mV at -5 A collector current, and the saturation resistance is 55 to 80 mΩ at -2 A collector current. The device has a maximum power dissipation of 1.35 W on a 1 cm² copper pad and 2 W on a 6 cm² pad. Junction temperature operates up to 150 °C. The pinout is base, collector, emitter, collector. The NPN complement is PBSS4540Z.
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | PBSS5540Z/8X |
| Product Name | 40 V low VCEsat PNP transistor |
| Package Type | SOT223; SOT223 SOT223 |
