NPN low V<sub>CEsat</sub> transistor in a small SOT457 (SC-74) surface-mounted plastic package with six leads. The device supports a continuous collector current of 4 A and a peak collector current of 15 A under pulsed conditions. Collector-emitter saturation resistance is specified as 50 to 70 mΩ at 4 A collector current and 400 mA base current. It is qualified to AEC-Q101 and suitable for automotive applications. Power dissipation varies with PCB mounting: up to 1.1 W on ceramic PCB, or 2.5 W under pulsed conditions on FR4 with a 6 cm² collector pad. Junction temperature range is -65 °C to 150 °C.
NPN low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5420D
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | PBSS4420D-QX |
| Product Name | 20 V, 4 A NPN low VCEsat transistor |
| Package Type | SOT457 SOT457 |
