Nexperia B.V. 30 V, 3 A NPN low VCEsat transistor PBSS4330PAS-Q/GX

Description
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote
Description
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

30 V, 3 A NPN low VCEsat transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD plastic package measuring 2 mm x 2 mm x 0.65 mm, with an exposed heat sink for enhanced thermal and electrical conductivity. Supports peak collector current of 5 A, collector-emitter saturation voltage of 75 to 100 mΩ at 3 A collector current and 300 mA base current, and operates up to 175 °C junction temperature. Qualified to AEC-Q101 for automotive applications.

Datasheet Summary
Powered by GS/AI

30 V, 3 A NPN low VCEsat transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD plastic package measuring 2 mm x 2 mm x 0.65 mm, with an exposed heat sink for enhanced thermal and electrical conductivity. Supports peak collector current of 5 A, collector-emitter saturation voltage of 75 to 100 mΩ at 3 A collector current and 300 mA base current, and operates up to 175 °C junction temperature. Qualified to AEC-Q101 for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
30 V, 3 A NPN low VCEsat transistor - PBSS4330PAS-Q/GX - Nexperia B.V.
Nijmegen, Netherlands
30 V, 3 A NPN low VCEsat transistor
PBSS4330PAS-Q/GX
30 V, 3 A NPN low VCEsat transistor PBSS4330PAS-Q/GX
NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement: PBSS5330PAS Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

PNP complement: PBSS5330PAS

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • High temperature applications up to 175 °C
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Leadless small SMD plastic package with soldarable side pads
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number PBSS4330PAS-Q/GX
Product Name 30 V, 3 A NPN low VCEsat transistor
Package Type SOT1061D SOT1061D
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 500 mA PNP general-purpose transistors - BC807-25H-QR - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
2 suppliers
Bipolar Transistors - 7258512 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT323; Sot-323 (sc-70)
View Details
3 suppliers
45 V, 500 mA PNP general-purpose transistors - BC807-40QBH-QZ - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT8015 SOT8015
View Details
3 suppliers
Mosfet, Nn Channel, 60V, 0.35A, Sot666; Channel Type Nexperia - 59T0226 - Newark, An Avnet Company
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type TO-3
View Details