Nexperia B.V. 30 V, 5.1 A NPN low VCEsat transistor PBSS303NX-QX

Description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX-Q. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX-Q. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
30 V, 5.1 A NPN low VCEsat transistor - PBSS303NX-QX - Nexperia B.V.
Nijmegen, Netherlands
30 V, 5.1 A NPN low VCEsat transistor
PBSS303NX-QX
30 V, 5.1 A NPN low VCEsat transistor PBSS303NX-QX
NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX-Q. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS303PX-Q.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS303NX-QXTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS303NX-QXTR-ND
Single Bipolar Transistors 1727-PBSS303NX-QXTR-ND
TRANS NPN 30V 5.1A SOT-89

TRANS NPN 30V 5.1A SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS303NX-QXDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS303NX-QXDKR-ND
Single Bipolar Transistors 1727-PBSS303NX-QXDKR-ND
TRANS NPN 30V 5.1A SOT-89

TRANS NPN 30V 5.1A SOT-89

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS303NX-QXCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS303NX-QXCT-ND
Single Bipolar Transistors 1727-PBSS303NX-QXCT-ND
TRANS NPN 30V 5.1A SOT-89

TRANS NPN 30V 5.1A SOT-89

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBSS303NX-QX 1727-PBSS303NX-QXTR-ND
Product Name 30 V, 5.1 A NPN low VCEsat transistor Single Bipolar Transistors
Package Type SOT89; SOT89 SOT89 SOT89; TO-243AA
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