Nexperia B.V. Single FETs, MOSFETs BUK7E5R2-100E,127

N-channel TrenchMOS FET for automotive applications, rated at 100 V drain-source voltage and 120 A continuous drain current, with a total power dissipation of 349 W. Packaged in an I2PAK (SOT226) case and qualified to AEC-Q101 standard, it supports junction temperatures up to 175 °C and features repetitive avalanche ruggedness. Gate threshold voltage exceeds 1 V at 175 °C, and drain-source on-state resistance is 4.1 to 5.2 mΩ at 25 °C.