PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks, measuring 1.4 mm x 1.2 mm x 0.48 mm and 0.48 mm in height. Rated for a collector-emitter voltage of -65 V, a continuous collector current of -100 mA, and a peak collector current of -200 mA. Total power dissipation is 360 mW on a 35 µm copper PCB and 450 mW on a 70 µm copper PCB. Qualified to AEC-Q101 for automotive applications. DC current gain (hFE) ranges from 125 to 250 at -5 V collector-emitter voltage and -2 mA collector current.
PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1.Product overview
Type number
-
Package
-
NPN complement:
Nexperia
-
JEDEC
BC856AQC-Q
SOT8009
MO-340CA
BC846AQC-Q
BC856BQC-Q
BC846BQC-Q
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 360mW Surface Mount, Wettable Flank DFN1412D-3
45 V, 100 mA PNP general-purpose transistors
TRANSISTOR, BIPOLAR, 65V, 0.1A, DFN1412D ROHS COMPLIANT: YES
TRANS PNP 65V 0.1A DFN1412D-3
| Nexperia B.V. | DigiKey | Rochester Electronics | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BC856AQC-QZ | 1727-BC856AQC-QZTR-ND | BC856AQC-QZ | 85AJ1648 | BC856AQC-QZ |
| Product Name | 65 V, 100 mA PNP general-purpose transistors | Single Bipolar Transistors | Transistor, Bipolar, 65V, 0.1A, Dfn1412D Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT8009 SOT8009 | 3-XDFN Exposed Pad | SOT8009 | TO-3 | DFN1412D-3 |
| IC(max) | -100 milliamps | 100 milliamps | |||
| VCEO | -65 volts | 65 volts | |||
| PD | 360 milliwatts | ||||
| hfe | 250 |
