Nexperia B.V. 60 V, 1 A NPN medium power transistors BC55-16PA,115

Description
NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number - Package - NPN complement Nexperia - JEITA BC55PA SOT1061 - BC52PA BC55-10PA BC52-10PA BC55-16PA BC52-16PA Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers
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Description
NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number - Package - NPN complement Nexperia - JEITA BC55PA SOT1061 - BC52PA BC55-10PA BC52-10PA BC55-16PA BC52-16PA Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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NPN medium power transistor in an ultra thin SOT1061 leadless SMD plastic package with an exposed heatsink for enhanced thermal conductivity. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a peak collector current of 2 A. The device features three DC current gain selections, with the BC55-16PA variant offering a gain range of 100 to 250 at VCE = 2 V and IC = 150 mA. The package measures 2 mm x 2 mm x 0.65 mm with a 1.3 mm pitch and side-wettable flanks. Maximum junction temperature is 150 °C, and it is rated for operation from -55 °C to 150 °C ambient temperature. The part meets IEC 60134 for limiting values and is not automotive qualified.

Datasheet Summary
Powered by GS/AI

NPN medium power transistor in an ultra thin SOT1061 leadless SMD plastic package with an exposed heatsink for enhanced thermal conductivity. It has a collector-emitter voltage rating of 60 V, a continuous collector current of 1 A, and a peak collector current of 2 A. The device features three DC current gain selections, with the BC55-16PA variant offering a gain range of 100 to 250 at VCE = 2 V and IC = 150 mA. The package measures 2 mm x 2 mm x 0.65 mm with a 1.3 mm pitch and side-wettable flanks. Maximum junction temperature is 150 °C, and it is rated for operation from -55 °C to 150 °C ambient temperature. The part meets IEC 60134 for limiting values and is not automotive qualified.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A NPN medium power transistors - BC55-16PA,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A NPN medium power transistors
BC55-16PA,115
60 V, 1 A NPN medium power transistors BC55-16PA,115
NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number - Package - NPN complement Nexperia - JEITA BC55PA SOT1061 - BC52PA BC55-10PA BC52-10PA BC55-16PA BC52-16PA Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators Power management Low-side switches MOSFET drivers Battery-driven devices Amplifiers

NPN medium power transistor in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview

Type number

-

Package

-

NPN complement

Nexperia

- JEITA

BC55PA

SOT1061

-

BC52PA

BC55-10PA

BC52-10PA

BC55-16PA

BC52-16PA

Features and benefits

  • High current
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity
  • Leadless very small SMD plastic package with medium power capability

Applications

  • Linear voltage regulators
  • Power management
  • Low-side switches
  • MOSFET drivers
  • Battery-driven devices
  • Amplifiers
Supplier's Site Datasheet
 - BC55-16PA,115 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet
Single Bipolar Transistors - 1727-2344-1-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2344-1-ND
Single Bipolar Transistors 1727-2344-1-ND
Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
Single Bipolar Transistors - 1727-2344-6-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2344-6-ND
Single Bipolar Transistors 1727-2344-6-ND
Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
Single Bipolar Transistors - 1727-2344-2-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-2344-2-ND
Single Bipolar Transistors 1727-2344-2-ND
Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor NPN 60V 1A 180MHz 650mW Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
Singapore, Singapore
60 V 1 A DFN Bipolar Transistor
276-BC55-16PA,115
60 V 1 A DFN Bipolar Transistor 276-BC55-16PA,115
60 V, 1 A NPN medium power transistor DFN 3-Pin Product overview: BC55-16PA,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC55-16PA,115 can be used for catalog matching and distributor lookup.

60 V, 1 A NPN medium power transistor DFN 3-Pin Product overview: BC55-16PA,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60 V, 1 A, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 60 V, 1 A, DFN, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC55-16PA,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC55-16PA,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC55-16PA,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC55-16PA,115
TRANS NPN 60V 1A 3HUSON

TRANS NPN 60V 1A 3HUSON

Supplier's Site
Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 1.65 W, 1 A, 100 Rohs Compliant Nexperia - 05W5361 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 1.65 W, 1 A, 100 Rohs Compliant Nexperia
05W5361
Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 1.65 W, 1 A, 100 Rohs Compliant Nexperia 05W5361
Bipolar (BJT) Single Transistor, NPN, 60 V, 180 MHz, 1.65 W, 1 A, 100 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 60 V, 180 MHz, 1.65 W, 1 A, 100 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC55-16PA,115 BC55-16PA,115 1727-2344-1-ND 276-BC55-16PA,115 BC55-16PA,115 05W5361
Product Name 60 V, 1 A NPN medium power transistors Single Bipolar Transistors 60 V 1 A DFN Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 1.65 W, 1 A, 100 Rohs Compliant Nexperia
Package Type SOT1061 SOT1061 SOT1061 3-PowerUDFN AEC-Q100 TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity NPN NPN
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