Nexperia B.V. 65 V, 100 mA NPN/NPN general-purpose double transistor BC846BSH-QX

Description
NPN/NPN general-purpose double transistor in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC856BSH-Q NPN/PNP complement: BC846BPNH-Q Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors High-temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification
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Description
NPN/NPN general-purpose double transistor in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC856BSH-Q NPN/PNP complement: BC846BPNH-Q Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors High-temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification
Request a Quote
Datasheet
Datasheet Summary
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65 V, 100 mA NPN/NPN general-purpose double transistor in a TSSOP6 (SOT363) surface-mounted package measuring 2.1 mm × 1.25 mm × 0.95 mm. Features low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and no mutual interference between transistors. Operates up to 175 °C junction temperature and is qualified to AEC-Q101 for automotive applications. Maximum collector current is 100 mA, collector-emitter voltage is 65 V, and total power dissipation is 400 mW per device when mounted on an FR4 PCB.

Datasheet Summary
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65 V, 100 mA NPN/NPN general-purpose double transistor in a TSSOP6 (SOT363) surface-mounted package measuring 2.1 mm × 1.25 mm × 0.95 mm. Features low collector capacitance, low collector-emitter saturation voltage, closely matched current gain, and no mutual interference between transistors. Operates up to 175 °C junction temperature and is qualified to AEC-Q101 for automotive applications. Maximum collector current is 100 mA, collector-emitter voltage is 65 V, and total power dissipation is 400 mW per device when mounted on an FR4 PCB.

Suppliers

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Product
Description
Supplier Links
65 V, 100 mA NPN/NPN general-purpose double transistor - BC846BSH-QX - Nexperia B.V.
Nijmegen, Netherlands
65 V, 100 mA NPN/NPN general-purpose double transistor
BC846BSH-QX
65 V, 100 mA NPN/NPN general-purpose double transistor BC846BSH-QX
NPN/NPN general-purpose double transistor in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC856BSH-Q NPN/PNP complement: BC846BPNH-Q Features and benefits Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces number of components and board space No mutual interference between the transistors High-temperature applications up to 175 °C Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification

NPN/NPN general-purpose double transistor in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

PNP/PNP complement: BC856BSH-Q

NPN/PNP complement: BC846BPNH-Q

Features and benefits

  • Low collector capacitance
  • Low collector-emitter saturation voltage
  • Closely matched current gain
  • Reduces number of components and board space
  • No mutual interference between the transistors
  • High-temperature applications up to 175 °C
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • General-purpose switching and amplification
Supplier's Site Datasheet
Bipolar Transistor Arrays - 1727-BC846BSH-QXCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC846BSH-QXCT-ND
Bipolar Transistor Arrays 1727-BC846BSH-QXCT-ND
TRANS 2NPN 65V 100MA 6-TSSOP

TRANS 2NPN 65V 100MA 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-BC846BSH-QXDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC846BSH-QXDKR-ND
Bipolar Transistor Arrays 1727-BC846BSH-QXDKR-ND
TRANS 2NPN 65V 100MA 6-TSSOP

TRANS 2NPN 65V 100MA 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-BC846BSH-QXTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-BC846BSH-QXTR-ND
Bipolar Transistor Arrays 1727-BC846BSH-QXTR-ND
TRANS 2NPN 65V 100MA 6-TSSOP

TRANS 2NPN 65V 100MA 6-TSSOP

Buy Now Datasheet
 - BC846BSH-QX - Rochester Electronics
Newburyport, MA, United States
65 V, 100 mA NPN/NPN general-purpose double transistor

65 V, 100 mA NPN/NPN general-purpose double transistor

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics
Product Category Bipolar RF Transistors Transistors RF Transistors
Product Number BC846BSH-QX 1727-BC846BSH-QXCT-ND BC846BSH-QX
Product Name 65 V, 100 mA NPN/NPN general-purpose double transistor Bipolar Transistor Arrays
Package Type SOT363-3 SOT363-3 6-TSSOP, SC-88, SOT-363 SOT363
IC(max) 100 milliamps
VCEO 65 volts
PD 270 milliwatts
hfe 450
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