California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3 NESG2107M33-T3

Description
Manufacturer: CEL Win Source Part Number: 252178-NESG2107M33-T 3 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 140 @ 5mA, 1V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: CEL Win Source Part Number: 252178-NESG2107M33-T 3 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 140 @ 5mA, 1V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3 - 252178-NESG2107M33-T3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3
252178-NESG2107M33-T3
TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3 252178-NESG2107M33-T3
Manufacturer: CEL Win Source Part Number: 252178-NESG2107M33-T 3 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 140 @ 5mA, 1V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: CEL
Win Source Part Number: 252178-NESG2107M33-T3
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 7dB to 10dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-SuperMiniMold (M33)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
Typical Gain (hFE) (Min): 140 @ 5mA, 1V
Maximum Power Dissipation: 130mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 252178-NESG2107M33-T3
Product Name TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3
Polarity NPN; NPN
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