California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3-A NESG2107M33-T3-A

Description
Manufacturer: CEL Win Source Part Number: 252179-NESG2107M33-T 3-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 140 @ 5mA, 1V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: CEL Win Source Part Number: 252179-NESG2107M33-T 3-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 140 @ 5mA, 1V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3-A - 252179-NESG2107M33-T3-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3-A
252179-NESG2107M33-T3-A
TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3-A 252179-NESG2107M33-T3-A
Manufacturer: CEL Win Source Part Number: 252179-NESG2107M33-T 3-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 7dB to 10dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (M33) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 140 @ 5mA, 1V Maximum Power Dissipation: 130mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 252179-NESG2107M33-T3-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 7dB to 10dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.9dB to 1.5dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-SuperMiniMold (M33)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 5V
Typical Gain (hFE) (Min): 140 @ 5mA, 1V
Maximum Power Dissipation: 130mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 252179-NESG2107M33-T3-A
Product Name TRANSISTORS - RF Transistors (BJT) - NESG2107M33-T3-A
Polarity NPN; NPN
Unlock Full Specs
to access all available technical data

Similar Products

Single IGBTs - 448-AIKP20N60CTAKSA1-ND - DigiKey
Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-220; TO-220-3
View Details
3 suppliers
MOSFET - ALD212914SAL - VAST STOCK CO., LIMITED
Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - BC807-25LR - 912922-BC807-25LR - Win Source Electronics
Specs
Polarity PNP
Package Type SOT3; TO-236AB
View Details
6 suppliers