California Eastern Laboratories - CEL Bipolar RF Transistors NE696M01-A

The NE696M01-A is an NPN silicon RF transistor in a 6-pin SOT-363 surface mount package, designed for low-noise amplifier and pre-driver applications up to 2.4 GHz. It features a gain bandwidth product of 14 GHz at 3 V and 10 mA, a noise figure of 1.6 dB at 2 GHz and 3 mA, and an insertion power gain of 14 dB at 2 GHz. The transistor operates with a maximum collector-emitter voltage of 6 V, collector current of 30 mA, and total power dissipation of 150 mW. It meets RoHS standards for hazardous substance restrictions and is rated for junction temperatures up to 150 °C. The device uses four emitter pins to reduce inductance, improving gain over standard SOT-23 and SOT-143 packages.