NPN silicon RF transistor for low-noise amplifier applications, housed in SOT-23 (package outline 30) with a 2.9 mm length and 1.7 mm width. Features a gain-bandwidth product of 8 GHz and a noise figure of 1.4 dB at 1 GHz and 1.6 dB at 2 GHz with VCE = 2.5 V and IC = 1 mA. Maximum collector-emitter voltage is 10 V, collector current is 65 mA, and power dissipation is 150 mW. Junction temperature operates up to 150°C.
RF TRANS NPN 10V 7GHZ SOT523
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | NE68119-A |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN; NPN |
| Package Type | SOT-523 |
| IC(max) | 65 milliamps |
| VCEO | 10 volts |
| Power Gain | 10 dB |
