NPN silicon high-frequency transistor for RF applications with a gain bandwidth product of 10 GHz, a noise figure of 2.6 dB at 4 GHz, and an associated gain of 6.5 dB at 4 GHz. Operates at a maximum collector current of 35 mA and collector-emitter voltage of 10 V. Mounted in SOT-143R package with total power dissipation of 200 mW. Junction temperature rating is 150°C. Complies with EIAJ 2SC4095 registered number.
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-143R
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 51-NE68039R-T1TR-ND |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN |
