California Eastern Laboratories - CEL Bipolar RF Transistors NE68033-T1B-A

Description
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-23-3
  • Bipolar RF Transistors - NE68033-T1B-ATR-ND - DigiKey
    DigiKey
  • TRANSISTORS - RF Transistors (BJT) - NE68033-T1B-A - 1082917-NE68033-T1B-A - Win Source Electronics
    Win Source Electronics
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Description
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-23-3
Request a Quote Datasheet

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Bipolar RF Transistors - NE68033-T1B-ATR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68033-T1B-ATR-ND
Bipolar RF Transistors NE68033-T1B-ATR-ND
RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-23-3

RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-23-3

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TRANSISTORS - RF Transistors (BJT) - NE68033-T1B-A - 1082917-NE68033-T1B-A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE68033-T1B-A
1082917-NE68033-T1B-A
TRANSISTORS - RF Transistors (BJT) - NE68033-T1B-A 1082917-NE68033-T1B-A
Manufacturer: CEL Win Source Part Number: 1082917-NE68033-T1B- A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 10mA, 6V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: CEL
Win Source Part Number: 1082917-NE68033-T1B-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 50 @ 10mA, 6V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors RF Transistors
Product Number NE68033-T1B-ATR-ND 1082917-NE68033-T1B-A
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - NE68033-T1B-A
Polarity NPN NPN; NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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