The NE5550234 is a silicon power MOS FET designed for VHF to UHF-band Class-AB power amplifier applications, supporting frequencies from 150 MHz to 900 MHz. It is packaged in a 3-pin V5 minimold with a width of 12 mm and is supplied on embossed tape with the gate pin facing the perforation side. The device operates at a drain-source voltage up to 9.0 V and a gate-source voltage range of 1.65 to 2.85 V, with a maximum drain current of 0.6 A. It delivers 33.0 dBm typical output power at 460 MHz with 68% typical power added efficiency and 23.5 dB typical linear gain. The thermal resistance from channel to case is 10.0 °C/W, and the maximum channel temperature is 150 °C.
RF Mosfet N-Channel 7.5V 40mA 900MHz 23.5dB 32.2dB 3-PowerMiniMold
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE5550234-AZ-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | TO-243AA |
