N-Channel GaAs HJ-FET designed for K band low noise and high-gain applications, packaged in a Micro-X plastic (S03) format with dimensions of 5.0 mm × 3.2 mm × 1.0 mm. It operates at a drain-to-source voltage of 1 to 3 V and a drain current of 5 to 15 mA, achieving a typical noise figure of 0.65 dB and associated gain of 13.5 dB at 20 GHz. The device meets a maximum total power dissipation of 165 mW and is rated for a channel temperature up to +125°C. It is mounted on glass epoxy PCB and complies with RoHS requirements.
RF Mosfet HFET 2V 10mA 20GHz 13.5dB S03
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE3520S03-T1C-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads |
