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Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - 06N60C3 06N60C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 147072-06N60C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 3.9V @ 260μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 06N60C3 - 147072-06N60C3 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 06N60C3
147072-06N60C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 06N60C3 147072-06N60C3
Manufacturer: Infineon Technologies Win Source Part Number: 147072-06N60C3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 74W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 3.9V @ 260μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 620pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 750 mOhm @ 3.9A, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 147072-06N60C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 260μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 750 mOhm @ 3.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 147072-06N60C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 06N60C3
Polarity N-Channel; N-Channel
V(BR)DSS 650 volts
PD 74000 milliwatts
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