NE3510M04-A is a GaAs HJ-FET for RF applications, part of the NE3510M04 series. It is packaged in a plastic SMD M04 case. The device exhibits a typical noise figure of 0.35 dB and a gain of 19.0 dB at 2.0 GHz, with a saturated output power of +12.0 dBm at a bias of 3.0 V and 30 mA drain current.
RF Mosfet HFET 2V 15mA 4GHz 16dB 11dBm M04
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE3510M04-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT-343F |
