NCEPOWER  Transistors NCE65T180

Description
650V 21A 150mΩ@10V,10.5A 188W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
  • Transistors - NCE65T180 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
650V 21A 150mΩ@10V,10.5A 188W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE65T180 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE65T180
Transistors NCE65T180
650V 21A 150mΩ@10V,10.5A 188W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS

650V 21A 150mΩ@10V,10.5A 188W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE65T180
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Small Signal Switching Transistor - 2N2907A - Micross Components, Inc.
Micross Components, Inc.
Small Signal Switching Transistor
2N2907A
View Details
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Qorvo
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
QPD2025D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E - 855067-2SA2014-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA2014-TD-E
2SA2014-TD-E
Specs
Package Type SOT3
View Details