NCEPOWER  Transistors NCE40H12I

Description
40V 120A 3.6mΩ@10V,20A 120W 1.8V@250uA 1 N-Channel TO-251 MOSFETs ROHS
Description
40V 120A 3.6mΩ@10V,20A 120W 1.8V@250uA 1 N-Channel TO-251 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE40H12I - ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE40H12I
Transistors NCE40H12I
40V 120A 3.6mΩ@10V,20A 120W 1.8V@250uA 1 N-Channel TO-251 MOSFETs ROHS

40V 120A 3.6mΩ@10V,20A 120W 1.8V@250uA 1 N-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE40H12I
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor - QPD0007 - Qorvo
Specs
Transistor Technology / Material DC - 5 GHz, 20 Watt, 48 Volt, GaN RF Transistor
Package Type DFN
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Transistor - 32470700 - Radwell International
Fuji Electric Corp. of America
View Details