Murata Electronics Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules DFE201612PD-R24M=P2

Description
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Material - Core: Ceramic Inductance: 350μH Tolerance: ±20% Current Rating (Amps): 690mA Current - Saturation (Isat): 7.6A
Request a Quote Datasheet
Description
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Material - Core: Ceramic Inductance: 350μH Tolerance: ±20% Current Rating (Amps): 690mA Current - Saturation (Isat): 7.6A
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr: TE Connectivity Aerospace, Defense and Marine Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Packaging: Bulk Part Status: Obsolete Type: Header, Male Pins, Shrouded (4 Side) Material - Core: Ceramic Inductance: 350μH Tolerance: ±20% Current Rating (Amps): 690mA Current - Saturation (Isat): 7.6A

Mfr: TE Connectivity Aerospace, Defense and Marine
Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Packaging: Bulk
Part Status: Obsolete
Type: Header, Male Pins, Shrouded (4 Side)
Material - Core: Ceramic
Inductance: 350μH
Tolerance: ±20%
Current Rating (Amps): 690mA
Current - Saturation (Isat): 7.6A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Package Type SOT3
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor - T2G6001528-SG - Qorvo
Specs
Transistor Technology / Material DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor
Package Type NI-200
Transistor Grade / Operating Range Military
View Details
3 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD212904SAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
4 suppliers
Transistor - 436311 - Radwell International
Fuji Electric Corp. of America
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S - 855022-2SA1248S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details