multicomp PRO P-Channel Enhancement Mode Mosfet, Sot-23 Multicomp Pro BSS84ES

Description
P-CHANNEL ENHANCEMENT MODE MOSFET, SOT-23
Description
P-CHANNEL ENHANCEMENT MODE MOSFET, SOT-23
Datasheet
Datasheet Summary
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BSS84ES is a P-channel enhancement mode MOSFET in SOT-23 package, designed for switching applications. It has a drain-to-source voltage rating of -50 V and a continuous drain current of -130 mA. The device features a maximum power dissipation of 0.36 W and an on-resistance of up to 8 Ω at VGS = -5 V and ID = -0.1 A. Thermal resistance junction-to-air is 347 °C/W. The gate is ESD protected up to 2 kV HBM, and the molding compound meets UL 94 V-0 flammability rating. The operating junction temperature range is -55 °C to +150 °C.

Datasheet Summary
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BSS84ES is a P-channel enhancement mode MOSFET in SOT-23 package, designed for switching applications. It has a drain-to-source voltage rating of -50 V and a continuous drain current of -130 mA. The device features a maximum power dissipation of 0.36 W and an on-resistance of up to 8 Ω at VGS = -5 V and ID = -0.1 A. Thermal resistance junction-to-air is 347 °C/W. The gate is ESD protected up to 2 kV HBM, and the molding compound meets UL 94 V-0 flammability rating. The operating junction temperature range is -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
P-Channel Enhancement Mode Mosfet, Sot-23 Multicomp Pro - 52AK7684 - Newark, An Avnet Company
Chicago, IL, United States
P-Channel Enhancement Mode Mosfet, Sot-23 Multicomp Pro
52AK7684
P-Channel Enhancement Mode Mosfet, Sot-23 Multicomp Pro 52AK7684
P-CHANNEL ENHANCEMENT MODE MOSFET, SOT-23

P-CHANNEL ENHANCEMENT MODE MOSFET, SOT-23

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 52AK7684
Product Name P-Channel Enhancement Mode Mosfet, Sot-23 Multicomp Pro
Polarity P-Channel
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