multicomp PRO Bipolar Transistor, Npn, 60V, To-39; Transistor Polarity Multicomp Pro 2N4238

Description
BIPOLAR TRANSISTOR, NPN, 60V, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
Description
BIPOLAR TRANSISTOR, NPN, 60V, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The 2N4238 is a PNP bipolar transistor in a TO-39 metal can package, rated for a collector-emitter voltage of 60 V and a continuous collector current of 1 A. It dissipates 1 W at 25°C ambient temperature, with derating of 5.3 mW/°C above this point. The junction-to-case thermal resistance is 29 °C/W, and the operating and storage junction temperature range is from -65°C to +200°C. The transistor has a minimum current gain (hFE) of 15 at 1 A collector current and 1 V collector-emitter voltage. Collector cut-off current is 0.1 mA at rated collector-base voltage. The base-emitter saturation voltage is 1.5 V at 1 A collector current and 0.1 A base current. Output capacitance is 100 pF at 10 V collector-base voltage. Dimensions are nominal: height 12.7 mm, body diameter 7.74 to 8.5 mm, lead diameter 0.4 to 0.53 mm.

Datasheet Summary
Powered by GS/AI

The 2N4238 is a PNP bipolar transistor in a TO-39 metal can package, rated for a collector-emitter voltage of 60 V and a continuous collector current of 1 A. It dissipates 1 W at 25°C ambient temperature, with derating of 5.3 mW/°C above this point. The junction-to-case thermal resistance is 29 °C/W, and the operating and storage junction temperature range is from -65°C to +200°C. The transistor has a minimum current gain (hFE) of 15 at 1 A collector current and 1 V collector-emitter voltage. Collector cut-off current is 0.1 mA at rated collector-base voltage. The base-emitter saturation voltage is 1.5 V at 1 A collector current and 0.1 A base current. Output capacitance is 100 pF at 10 V collector-base voltage. Dimensions are nominal: height 12.7 mm, body diameter 7.74 to 8.5 mm, lead diameter 0.4 to 0.53 mm.

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor, Npn, 60V, To-39; Transistor Polarity Multicomp Pro - 35C0716 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Transistor, Npn, 60V, To-39; Transistor Polarity Multicomp Pro
35C0716
Bipolar Transistor, Npn, 60V, To-39; Transistor Polarity Multicomp Pro 35C0716
BIPOLAR TRANSISTOR, NPN, 60V, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

BIPOLAR TRANSISTOR, NPN, 60V, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Bipolar RF Transistors
Product Number 35C0716
Product Name Bipolar Transistor, Npn, 60V, To-39; Transistor Polarity Multicomp Pro
Polarity NPN
Unlock Full Specs
to access all available technical data