LEE-9+ is a wideband monolithic amplifier fabricated using HBT technology, designed for applications requiring DC to 8 GHz operation with internal 50Ω matching. It is housed in a 3 mm × 3 mm × 0.89 mm MCLP package with an exposed thermal pad for improved thermal performance. The device provides a typical gain of 8.4 dB at 2 GHz with ±0.5 dB flatness across the band, an output power at 1 dB compression of +13.9 dBm at 2 GHz, and input and output return losses exceeding 17 dB and 12 dB respectively over the frequency range. It operates at 50 mA and +4.0 V, with a junction-to-case thermal resistance of 138 °C/W. The part is RoHS compliant, has a moisture sensitivity level of MSL1, and meets ESD standards of HBM Class 1B and MM Class M1.
LEE-9+ (RoHS compliant) is wideband current driven amplifier fabricated using HBT technology. In addition, the LEE-9+ has good input and output return loss over a broad frequency range without the need for external matching components. Lead finish is SnAgNi. It has repeatable performance from lot to lot and is enclosed in a 3 mm x 3 mm x 0.89 mm MCLP package for very good thermal performance.
RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873
RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873
RF Amplifier IC Cellular, PCS 0Hz ~ 8GHz FG873
IC AMP CELLULAR 0HZ-8GHZ FG873
| Mini-Circuits | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers | RF Amplifiers |
| Product Number | LEE-9+ | 3157-LEE-9+CT-ND | LEE-9+ |
| Product Name | SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 8000 MHz, 50Ω, 3x3 mm QFN Style Package | RF Amplifiers | RF and Wireless - RF Amplifiers |
| RoHS Compliant | RoHS | ||
| Frequency Range | 8000 MHz | 0.0 to 8000 MHz | 0.0 to 8000 MHz |
| Minimum Gain | 7.6 dB | 7.7 dB | ? to 7.7 dB |
| Maximum Gain | 9.3 dB | 7.7 dB | 7.7 dB |
| Output Power | 7.9 to 14.1 dBm | 14.1 dBm |
