Microsemi Corp. TRANSISTORS - Transistors (BJT) - Arrays - SG2003J SG2003J

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 211585-SG2003J Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 7 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-CDIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 211585-SG2003J Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 7 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-CDIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors (BJT) - Arrays - SG2003J - 211585-SG2003J - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - SG2003J
211585-SG2003J
TRANSISTORS - Transistors (BJT) - Arrays - SG2003J 211585-SG2003J
Manufacturer: Microsemi Corporation Win Source Part Number: 211585-SG2003J Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 7 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 16-CDIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 211585-SG2003J
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 7 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 16-CDIP
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 211585-SG2003J
Product Name TRANSISTORS - Transistors (BJT) - Arrays - SG2003J
Polarity NPN; 7 NPN Darlington
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