Microsemi Corp. Bipolar Transistors - BJT Jantxv2N6193

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Bipolar Transistors - BJT Power BJT
Description
Bipolar Transistors - BJT Power BJT
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The JANTXV2N6193 is a PNP silicon medium power transistor designed for high-reliability applications, qualified to MIL-PRF-19500/561. It is packaged in a TO-39 case and operates over a temperature range of -65°C to +200°C. The transistor has a collector-emitter voltage rating of 100 Vdc, a collector current of 5.0 Adc, and a total power dissipation of 1.0 W at 25°C with derating above that point. Thermal resistance from junction to case is 17.5°C/W. DC current gain ranges from 40 to 240 depending on collector current, with collector-emitter saturation voltage up to 1.2 V at 5.0 A collector current. It meets MIL-PRF-19500/561 qualification standards.

Datasheet Summary
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The JANTXV2N6193 is a PNP silicon medium power transistor designed for high-reliability applications, qualified to MIL-PRF-19500/561. It is packaged in a TO-39 case and operates over a temperature range of -65°C to +200°C. The transistor has a collector-emitter voltage rating of 100 Vdc, a collector current of 5.0 Adc, and a total power dissipation of 1.0 W at 25°C with derating above that point. Thermal resistance from junction to case is 17.5°C/W. DC current gain ranges from 40 to 240 depending on collector current, with collector-emitter saturation voltage up to 1.2 V at 5.0 A collector current. It meets MIL-PRF-19500/561 qualification standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantxv2N6193
Bipolar Transistors - BJT Jantxv2N6193
Bipolar Transistors - BJT Power BJT

Bipolar Transistors - BJT Power BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantxv2N6193
Product Name Bipolar Transistors - BJT
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