The JANTXV2N3700UB is a military-qualified, low-power NPN silicon transistor in a ceramic UB surface mount package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, a collector current rating of 1.0 A, and a total power dissipation of 0.5 W at 25 °C. Thermal impedance is 325 °C/W from junction to ambient and 90 °C/W from junction to solder pad. The device is qualified per MIL-PRF-19500/391 and meets RoHS compliance in commercial grade versions. Package dimensions are defined with a maximum height of 1.42 mm and overall footprint of 3.25 mm by 2.74 mm. Weight is less than 0.04 grams.
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC, UB-3 Product overview: JANTXV2N3700UB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 80V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N3700UB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N3700UB |
| Product Name | 1A 80V Bipolar Transistor |
| IC(max) | 1000 milliamps |
