Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907AL

The Jantxv2N2907AL is a PNP small signal silicon transistor in a TO-18 package, rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. It operates over a junction temperature range of -65°C to +200°C. The device achieves a forward current transfer ratio (hFE) of 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. It is qualified per MIL-PRF-19500/291 and meets JANTXV quality level requirements.